Monolithic Integration for Photonic Applications: MEMS on CMOS and

Functional BSOI

 

 

 

 

 

 

 

 

 

Dr. Christiane Kaden

Group Manager Engineering, Bulk MEMS-Technologies

Fraunhofer Institute for Photonic Microsystems IPMS

 

 

Abstract

 

Due to exploding use of sensors and actuators in mobile and industrial applications smaller systems combined with low power consumption and higher versatility are required. Innovative solutions are necessary to enhance integration density, to drive system feature size down, to suppress parasitics and/ or to reduce power consumption. As a highly specialized MEMS fab Fraunhofer IPMS employs surface and bulk micromachining for a large variety of MEMS devices e.g. for spatial light modulators (SLM), capacitive micro-machined ultrasonic transducers (CMUT), and scanning micro mirrors.

For surface MEMS the monolithic integration called MEMS-on-CMOS technology is often the choice to serve these demands. A combination of standard CMOS manufacturing using foundries with subsequent MEMS processing offers the use of adequate CMOS nodes and processes to achieve required functionalities. Based on a CMOS compatible inorganic sacrificial layer technique we will present solutions for the integration of MEMS on foundry-fabricated CMOS backplanes.

For bulk MEMS products often BSOI wafers are used as wafer material. To increase the degrees of freedom in MEMS design IPMS is implementing interconnects in the handle wafer of BSOI material, connected through the device wafer. We present a fully CMOS compatible approach of fabricating the interconnects, either by doping or by embedding n-doped poly-silicon in an insulating oxide.

CV

 

Dr. Christiane Kaden studied from 1984 to 1990 at the Georg-August-University of Göttingen  physics and received her PhD in 1995 from the  University of Stuttgart in the fields of semiconductor-lasers. From 1995 to 2009 she had different positions within quality management and process integration at microelectronic companies Infineon and Qimonda, dealing with technology nodes from 0.25 µm to 75 nm. She joined IPMS in 2010, working in the fields of micro bolometers, micro scanning mirrors and wafer direct bonding. Since 2013 she is leading the group “Bulk MEMS Technology” at IPMS.


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